Effect Transistor. P0260ETFS Datasheet

P0260ETFS Datasheet PDF, Equivalent


Part Number

P0260ETFS

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

NIKO-SEM

Total Page 4 Pages
PDF Download
Download P0260ETFS Datasheet PDF


P0260ETFS Datasheet
NIKO-SEM
N-Channel Enhancement Mode P0260ETF:TO-220F
Field Effect Transistor
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.3Ω
ID
2A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
2
1.3
8
2
20
29
11
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
4.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
600
V
23 4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
1
E-44-1

P0260ETFS Datasheet
NIKO-SEM
N-Channel Enhancement Mode P0260ETF:TO-220F
Field Effect Transistor
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 15V, ID = 2A
DYNAMIC
3.4
4
Input Capacitance
Ciss
322
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
41
Reverse Transfer Capacitance
Crss
9
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID = 2A, VGS = 10V
VGS = 10V , VDD = 300V,
ID = 2A, RG= 25Ω
10.7
1.4
4.8
30
61
59
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 2A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
295
1.2
4.3
2
1.5
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
E-44-1


Features Datasheet pdf NIKO-SEM N-Channel Enhancement Mode P02 60ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lea d-Free PRODUCT SUMMARY V(BR)DSS RDS( ON) 600V 4.3Ω ID 2A D G S ABSOLU TE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDI TIONS SYMBOL Drain-Source Voltage Gat e-Source Voltage Continuous Drain Curre nt2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 ° C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 10 0 °C Operating Junction & Storage Tem perature Range PD Tj, Tstg 1 23 1. G ATE 2. DRAIN 3. SOURCE LIMITS 600 ±30 2 1.3 8 2 20 29 11 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATIN GS THERMAL RESISTANCE SYMBOL Junction -to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH ,starting TJ = 25˚C TYPIC AL MAXIMUM 4.3 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS.
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