N-Channel Transistor. P1820BD Datasheet

P1820BD Transistor. Datasheet pdf. Equivalent

Part P1820BD
Description N-Channel Transistor
Feature P1820BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 160mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
Download P1820BD Datasheet

P1820BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1820BD Datasheet
Recommendation Recommendation Datasheet P1820BD Datasheet





P1820BD
P1820BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
18
11.4
30
Avalanche Current
IAS 18
Avalanche Energy
L = 1mH EAS 162
Power Dissipation
TC= 25 °C
TC= 100°C
PD
104
41
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
1.2
UNITS
°C / W
REV 1.0
1 2014-3-27



P1820BD
P1820BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 200V, VGS = 0V
VDS =160V, VGS = 0V, TJ = 125°C
200
1
V
23
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 9A
VGS =10V, ID = 9A
144 200
133 160
Forward Transconductance1
gfs
VDS =10V, ID =9A
20 S
DYNAMIC
Input Capacitance
Ciss
1154
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
169
Reverse Transfer Capacitance
Crss
43
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 160V , ID =18A
44
25
4.6
Gate-Drain Charge2
Qgd
19
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 100V , ID @ 18A,
VGS = 10V, RGEN =25Ω
200
260
Fall Time2
tf
190
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 18A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 18A, dlF/dt = 100A / μS
165
1
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
18
1.6
pF
nC
nS
A
V
nS
mC
REV 1.0
2 2014-3-27





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