N-Channel Transistor. P8315AD Datasheet

P8315AD Transistor. Datasheet pdf. Equivalent

Part P8315AD
Description N-Channel Transistor
Feature P8315AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download P8315AD Datasheet

P8315AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P8315AD Datasheet
Recommendation Recommendation Datasheet P8315AD Datasheet





P8315AD
P8315AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
20
12
50
Avalanche Current
IAS 20
Avalanche Energy3
EAS 220
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
1.7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Starting Tj =25 °C,IAS=20A,L=1.1mH,VDD=50V.
UNITS
°C / W
REV 1.0
1 2013-12-13



P8315AD
P8315AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
150
2 3.1
4
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID = 10A
VGS = 10V, ID = 10A
74 88
70 83
Forward Transconductance1
gfs
VDS = 10V, ID = 10A
22 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 10 V,
VDS = 75V, ID = 10A
VDD = 75V,
ID @ 10A, VGS = 10V, RGS= 6Ω
1320
169
42
42
8
21
14
50
48
38
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / μS
122
584
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
20
1.6
A
V
nS
nC
REV 1.0
2 2013-12-13





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