N-Channel Transistor. P0465CD Datasheet

P0465CD Transistor. Datasheet pdf. Equivalent

Part P0465CD
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode P0465CD Field Effect Transistor TO-252 Halogen-Free & Lead-.
Manufacture NIKO-SEM
Datasheet
Download P0465CD Datasheet

NIKO-SEM N-Channel Enhancement Mode P0465CD Field Effect P0465CD Datasheet
P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P0465CD Datasheet
Recommendation Recommendation Datasheet P0465CD Datasheet





P0465CD
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
650
±30
4
2.5
15
2
20
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
650
2.5
V
3.3 4.5
±100 nA
1
A
10
REV1.0
E-09-2
1



P0465CD
NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
DYNAMIC
2.1 2.6 Ω
2.5 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
512
52 pF
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID = 4A, VGS = 10V
VGS = 0V , VDD = 350V,
ID = 4A, RG= 25Ω
13
3.8 nC
4.3
27
59
nS
90
74
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
4A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
2.1 uC
REV1.0
E-09-2
2





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