N-Channel MOSFET. P2206BK Datasheet

P2206BK MOSFET. Datasheet pdf. Equivalent

Part P2206BK
Description N-Channel MOSFET
Feature NIKO-SEM N-Channel Enhancement Mode P2206BK Field Effect Transistor PDFN 5x6P Halogen-Free & Le.
Manufacture NIKO-SEM
Datasheet
Download P2206BK Datasheet

NIKO-SEM N-Channel Enhancement Mode P2206BK Field Effect P2206BK Datasheet
P2206BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2206BK Datasheet
Recommendation Recommendation Datasheet P2206BK Datasheet





P2206BK
NIKO-SEM
N-Channel Enhancement Mode
P2206BK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ
ID
24A
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
24
15
80
8
6.8
26
33.8
30
12
3.6
2.3
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RJA
RJA
35
65 °C / W
Junction-to-Case
Steady-State
RJC
4.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RJA t 10s value.
REV1.0
1
F-06-5



P2206BK
NIKO-SEM
N-Channel Enhancement Mode
P2206BK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 8A
VDS = 5V, ID = 8A
DYNAMIC
60
1.3 1.75 2.3
V
±100 nA
1
A
10
19 30
mΩ
16.5 22.5
35 S
Input Capacitance
Ciss
1039
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
123
Reverse Transfer Capacitance
Crss
82
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID = 8A
VDS = 30V ,
ID 8A, VGS = 10V, RGEN =6Ω
23
13
3.4
7.6
38
22
100
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 8A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
20
11
2.7
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV1.0
2
F-06-5





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