N-Channel MOSFET. P7502CMG Datasheet

P7502CMG MOSFET. Datasheet pdf. Equivalent

Part P7502CMG
Description N-Channel MOSFET
Feature P7502CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 75mΩ @VGS = 4.5V.
Manufacture UNIKC
Datasheet
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P7502CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P7502CMG Datasheet
Recommendation Recommendation Datasheet P7502CMG Datasheet





P7502CMG
P7502CMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 75mΩ @VGS = 4.5V
ID
3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3
2.5
12
Avalanche Current
IAS 6
Avalanche Energy
L = 0.1mH
EAS
1.8
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
115 °C / W
Ver 1.0
1 2012/4/12



P7502CMG
P7502CMG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±16V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 4.5V
VGS = 2.5V, ID = 1.5A
VGS = 4.5V, ID = 3A
VDS = 5V, ID = 3A
20
0.45 0.8 1.2
±100
1
10
12
105
75
9
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
269
106
Reverse Transfer Capacitance
Crss
76
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = 4.5V,
ID = 3A
5.2
0.6
2.5
Turn-On Delay Time2
td(on)
5.9
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 10V
ID @ 3A, VGEN = 4.5V, RG = 6Ω
13
23
Fall Time2
tf
19
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C )
Continuous Current
IS
Forward Voltage1
VSD IF = 2.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100 A/ms
10.2
2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.7
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12





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