N-Channel MOSFET. PM514BA Datasheet

PM514BA MOSFET. Datasheet pdf. Equivalent

Part PM514BA
Description N-Channel MOSFET
Feature PM514BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 40mΩ @VGS = 4.5V .
Manufacture UNIKC
Datasheet
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PM514BA
PM514BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 40mΩ @VGS = 4.5V
ID
3.3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.3
2.7
12
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.7
0.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
170
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2016/6/28



PM514BA
PM514BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.5 0.7 1
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 2.5A
VGS = 2.5V, ID = 2.8A
VGS = 4.5V, ID = 3A
VDS = 5V, ID = 3A
55 80
36 50
29 40
16
DYNAMIC
Input Capacitance
Ciss
331
Output Capacitance
Coss
VGS = 0V, VDS = 10V, f = 1MHz
56
Reverse Transfer Capacitance
Crss
44
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 10V,VGS = 4.5V,
ID= 3A
5
0.6
1.7
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 10V
ID @ 3A, VGEN= 4.5V, RG = 6Ω
30
90
Fall Time2
tf
31
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
0.7
1
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = 3A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
10
2
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.1
2 2016/6/28





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