P-Channel MOSFET. PA004EM Datasheet

PA004EM MOSFET. Datasheet pdf. Equivalent

Part PA004EM
Description P-Channel MOSFET
Feature PA004EM P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 100.
Manufacture UNIKC
Datasheet
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PA004EM P-Channel Logic Level Enhancement Mode MOSFET PRODU PA004EM Datasheet
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PA004EM
PA004EM
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
100mΩ @VGS = -10V
ID
-2.7A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2.7
-2.1
-25
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.1
0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
110
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/8/18



PA004EM
PA004EM
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1 -1.6 -2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 55 °C
VDS = -10V, VGS = -10V
-25
-1
mA
-10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -2.7A
VGS = -10V, ID = -2.7A
VDS = -5V, ID = -2.7A
95 150
68 100
8.8 S
DYNAMIC
Input Capacitance
Ciss
554
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
63
pF
Reverse Transfer Capacitance
Crss
49
Total Gate Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
VDS = 0.5V(BR)DSS,
10.5
5.7
Gate-Source Charge2
Qgs ID = -2.7A
1.9
Gate-Drain Charge2
Qgd
3
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -20V,ID @ -2.7A,
VGS = -10V, RG = 6Ω
24
25
Fall Time2
tf
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2.7A, VGS = 0V
-2.7
-1.2
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -2.7A, dlF/dt = 100 A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
20 nS
14 nC
2Independent of operating temperature.
REV 1.0
2 2014/8/18





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