P-Channel MOSFET. PA002FMG Datasheet

PA002FMG MOSFET. Datasheet pdf. Equivalent

Part PA002FMG
Description P-Channel MOSFET
Feature PA002FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 10.
Manufacture UNIKC
Datasheet
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PA002FMG
PA002FMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
100mΩ @VGS = -4.5V
ID
-3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3
-2.4
-10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.64
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
125 °C / W
REV 1.1
1 2014-3-10



PA002FMG
PA002FMG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
-20
-0.3 -0.8 -1.2
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -4.5V
-10
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -1.8V, ID = -1A
VGS = -2.5V, ID = -2.5A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
185 240
116 140
84 100
7
DYNAMIC
Input Capacitance
Ciss
540
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
75
Reverse Transfer Capacitance
Crss
50
Gate Resistance
Rg VGS = 15mV, VDS = 0V, f = 1MHz
4.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -4.5V,
ID = -3A
6.2
0.6
1.6
Turn-On Delay Time2
td(on)
11
Rise Time2
tr VDD = -10V
15
Turn-Off Delay Time2
td(off)
ID @ -1A, VGS = -4.5V, RG = 6Ω
50
Fall Time2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TC = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
-1.6
-1.2
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
REV 1.1
2 2014-3-10





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