P5803NAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
-30V
115mΩ @VGS = -10V
ID Channel 3A N -2A P
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Dr...
