N-Channel MOSFET. PM606BA Datasheet

PM606BA MOSFET. Datasheet pdf. Equivalent

Part PM606BA
Description N-Channel MOSFET
Feature PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM606BA Datasheet
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PM606BA
PM606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
5A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
5
3.7
Pulsed Drain Current1
IDM 15
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.8
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
146
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/9/10



PM606BA
PM606BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
30
1.3 1.75 2.3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
23 31
17 20
26 S
DYNAMIC
Input Capacitance
Ciss
329
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
70
Reverse Transfer Capacitance
Crss
45
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 15V, VGS = 10V,
ID = 5A
7.8
1.2
2.3
Turn-On Delay Time2
td(on)
17
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V
ID @ 5A, VGS = 10V, RGEN = 6Ω
17
37
Fall Time2
tf
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100 A/ms
10
2.6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.7
1.1
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/10





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