N-Channel MOSFET. PM5G8EA Datasheet

PM5G8EA MOSFET. Datasheet pdf. Equivalent

Part PM5G8EA
Description N-Channel MOSFET
Feature PM5G8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 22.5mΩ @VGS = 4.5.
Manufacture UNIKC
Datasheet
Download PM5G8EA Datasheet

PM5G8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM5G8EA Datasheet
Recommendation Recommendation Datasheet PM5G8EA Datasheet





PM5G8EA
PM5G8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22.5mΩ @VGS = 4.5V
ID
5.7A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
5.7
4.5
16
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
1.25
0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
3The Power dissipation is based on RqJA t 10s value.
MAXIMUM
100
145
UNITS
°C / W
REV 1.0
1 2016/12/20



PM5G8EA
PM5G8EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.5 0.7 1
±10
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 2A
VGS = 2.5V, ID = 4.5A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 4.6A
31 41
23 29
18 22.5
31
DYNAMIC
Input Capacitance
Ciss
867
Output Capacitance
Coss
VGS = 0V, VDS = 10V, f = 1MHz
81
Reverse Transfer Capacitance
Crss
68
Total Gate Charge2
Qg(VGS=4.5V)
Qg(VGS=2.5V)
VDS = 10V,VGS = 4.5V,
7.3
4.6
Gate-Source Charge2
Qgs
ID= 5A
0.6
Gate-Drain Charge2
Qgd
2.9
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 10V
ID @ 5A, VGS= 4.5V, RG = 6Ω
18
31
Fall Time2
tf
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
1.25
1
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = 5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
6.9
1
2Independent of operating temperature.
UNITS
V
mA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2016/12/20





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)