N-Channel MOSFET. P2502IZG Datasheet

P2502IZG MOSFET. Datasheet pdf. Equivalent

Part P2502IZG
Description Dual N-Channel MOSFET
Feature P2502IZG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 22mΩ @VGS =.
Manufacture UNIKC
Datasheet
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P2502IZG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM P2502IZG Datasheet
Recommendation Recommendation Datasheet P2502IZG Datasheet





P2502IZG
P2502IZG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID
6.3A
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current2
Pulsed Drain Current1
TA= 25 °C
TA = 70 °C
ID
IDM
6.3
5
50
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
23
Power Dissipation
TA = 25 °C
TA= 70 °C
PD
1.4
0.9
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
90
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-17



P2502IZG
P2502IZG
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 70 °C
20
0.5 0.7
1
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =1.8V, ID = 4A
VGS =2.5V, ID = 5A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 6A
24 34
18 26
15 22
35 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS =10V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 4.5V , VDS = 10V , ID = 6A
VDS = 10V ,
ID @ 6A, VGS = 4.5V, RGEN =6Ω
917
134
122
3
12.7
1.5
4.4
18
1.5
4.7
49
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 °C)
Continuous Current
IS
6.3 A
Forward Voltage1
VSD IF = 6A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dlF/dt = 100A / μS
13 nS
4 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014-2-17





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