P-Channel MOSFET. P3503EVG Datasheet

P3503EVG MOSFET. Datasheet pdf. Equivalent

Part P3503EVG
Description P-Channel MOSFET
Feature P3503EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 35mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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P3503EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P3503EVG Datasheet
Recommendation Recommendation Datasheet P3503EVG Datasheet





P3503EVG
P3503EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
35mΩ @VGS = -10V
ID
-8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
ID
IDM
-8
-7
-30
Power Dissipation
TC = 25 °C
TC = 70 °C
PD
2.5
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/10/17



P3503EVG
P3503EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-0.8 -1.5 -2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-30
-1
mA
-10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -8A
VDS = -10V, ID = -6A
44 60
28 35
7S
DYNAMIC
Input Capacitance
Ciss
970
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
370 pF
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -8A, VGS = -10V
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V,RL = 1Ω,
ID @ -1A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
180
28
6 nC
12
20
17
nS
180
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -1A, VGS = 0V
-3
A
-6
-1 V
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
7.9 nC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REV 1.0
2 2014/10/17





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