MOSFET. PA210HV Datasheet

PA210HV MOSFET. Datasheet pdf. Equivalent

Part PA210HV
Description MOSFET
Feature PA210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS.
Manufacture UNIKC
Datasheet
Download PA210HV Datasheet

PA210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PA210HV Datasheet
PA210HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM PA210HVA Datasheet
Recommendation Recommendation Datasheet PA210HV Datasheet





PA210HV
PA210HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID
2.8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
2.8
2.3
25
Avalanche Current
IAS 25
Avalanche Energy
L=0.1mH
EAS
31
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
REV 1.0
1 2014/11/24



PA210HV
PA210HV
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.0 2.0 3.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
25
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 2A
VGS = 10V, ID = 2A
VDS = 5V, ID = 2A
102 130
96 120
8.8
DYNAMIC
Input Capacitance
Ciss
1390
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
111
Reverse Transfer Capacitance
Crss
56
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 2A
VDS = 0.5V(BR)DSS,
ID @ 2A, VGS = 10V, RG = 6Ω
1.3
29
4
7
30
44
150
110
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
1.6
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
33
34
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/11/24





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