PD1503YVS Mode MOSFET Datasheet

PD1503YVS Datasheet, PDF, Equivalent


Part Number

PD1503YVS

Description

Dual N-Channel Enhancement Mode MOSFET

Manufacture

UNIKC

Total Page 8 Pages
Datasheet
Download PD1503YVS Datasheet


PD1503YVS
PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.8mΩ @VGS = 10V
Q1 30V 21.0mΩ @VGS = 10V
ID
9A
8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current2
Pulsed Drain Current1 , 2
TA = 25 °C
TA = 70 °C
ID
9
7
8
6
IDM 35 30
Avalanche Current
IAS 29 21
Avalanche Energy
L = 0.1mH
EAS
43
23
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.28
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Reverse Current
VR = 25V
IR
Forward Voltage
IF = 1A
VF
Schottky
0.05
0.45
UNITS
mA
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
Ver 1.0
1 2012/4/12

PD1503YVS
PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
Q2 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
VDS = 5V, ID = 9A
30
1 1.7 3
±100
1
10
35
14.2 20
10.5 15.8
25
DYNAMIC
Input Capacitance
Ciss
1040
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = 9A, VGS = 10V
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V, ID = 1A, VGS = 10V,
RG=6Ω
Fall Time2
tf
295
139
1.5
20
3.8
4.3
18
12
40
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / mS
15
6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.8
0.7
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
V
V
nS
nC
Ver 1.0
2 2012/4/12


Features PD1503YVS Dual N-Channel Enhancement Mod e MOSFET PRODUCT SUMMARY V(BR)DSS RD S(ON) Q2 30V 15.8mΩ @VGS = 10V Q1 30 V 21.0mΩ @VGS = 10V ID 9A 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TE ST CONDITIONS SYMBOL Q2 Q1 Drain-So urce Voltage VDS 30 30 Gate-Source Vo ltage VGS ±20 ±20 Continuous Drain Current2 Pulsed Drain Current1 , 2 TA = 25 °C TA = 70 °C ID 9 7 8 6 IDM 35 30 Avalanche Current IAS 29 21 A valanche Energy L = 0.1mH EAS 43 23 Power Dissipation TA = 25 °C TA = 7 0 °C PD 2 1.28 Operating Junction & Storage Temperature Range TJ, TSTG - 55 to 150 UNITS V A mJ W °C ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Ot herwise Noted) PARAMETERS/TEST CONDITI ONS SYMBOL Reverse Current VR = 25V IR Forward Voltage IF = 1A VF Scho ttky 0.05 0.45 UNITS mA V THERMAL RES ISTANCE RATINGS THERMAL RESISTANCE Junc tion-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum tempera.
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