MOSFET. PV516DA Datasheet

PV516DA MOSFET. Datasheet pdf. Equivalent

Part PV516DA
Description MOSFET
Feature PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = .
Manufacture UNIKC
Datasheet
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PV516DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PV516DA Datasheet
Recommendation Recommendation Datasheet PV516DA Datasheet





PV516DA
PV516DA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 35mΩ @VGS = 4.5V
ID
5.4A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
5.4
4.3
15
Avalanche Current
IAS 17
Avalanche Energy
L =0.1mH
EAS
14.4
Power Dissipation
TA = 25 °C
TA= 70°C
PD
1.7
1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
40
71
UNITS
°C / W
REV 1.0 1 2014/9/1



PV516DA
PV516DA
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 70 °C
20
0.5 0.6
1
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 1.8V, ID = 2A
VGS = 2.5V, ID = 4.5A
VGS = 4.5V, ID = 5A
36 55
25 38
21 35
Forward Transconductance1
gfs
VDS = 5V, ID = 5A
27 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
498
84 pF
Reverse Transfer Capacitance
Crss
73
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.5 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, VGS = 4.5V,
ID = 5A
VDS = 10V,
ID @ 5A, VGS = 4.5V, RG = 6Ω
7.8
0.6 nC
2.8
16
24
nS
32
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1.7 A
1V
14 nS
5.5 nC
REV 1.0 2 2014/9/1





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