AT28C010-12DK Datasheet | Space 1-MBit (128K x 8) Paged Parallel EEPROM





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Part Number AT28C010-12DK
Description Space 1-MBit (128K x 8) Paged Parallel EEPROM
Manufacture ATMEL
Total Page 19 Pages
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Features: Features • Fast Read Access Time – 1 20 ns • Automatic Page Write Operatio n – Internal Address and Data Latches for 128 Bytes – Internal Control Tim er • Fast Write Cycle Time – Page W rite Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • L ow Power Dissipation – 50 mA Active C urrent – 10 mA CMOS Standby Current Hardware and Software Data Protectio n • DATA Polling for End of Write Det ection • High Reliability CMOS Techno logy – Endurance: 5.104 Read/Modify W rite Cycles @ Ground Level – Data Ret ention: 10 Years • Operating Range: 4 .5V to 5.5V, -55 to +125°C • CMOS an d TTL Compatible Inputs and Outputs • No Single Event Latch-up below a LET T hreshold of 80 MeV/mg/cm2 • Tested up to a Total Dose of (according to MIL S TD 883 Method 1019): – 10 kRads (Si) Read-only Mode when Biased – 30 kRads (Si) Read-only Mode when Unbiased • JEDEC Approved byte-Wide Pinout 435 Mil s Wide 32-Pin Flat Pack Package AT2010-12DK Mil Space 1-MBit (.

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Features
Fast Read Access Time – 120 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
Low Power Dissipation
– 50 mA Active Current
– 10 mA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 5.104 Read/Modify Write Cycles @ Ground Level
– Data Retention: 10 Years
Operating Range: 4.5V to 5.5V, -55 to +125°C
CMOS and TTL Compatible Inputs and Outputs
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of (according to MIL STD 883 Method 1019):
– 10 kRads (Si) Read-only Mode when Biased
– 30 kRads (Si) Read-only Mode when Unbiased
JEDEC Approved byte-Wide Pinout
435 Mils Wide 32-Pin Flat Pack Package
AT2010-12DK Mil
Space 1-MBit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010-12DK
Description
The AT28C010-12DK is a high-performance Electrically Erasable and Programmable
Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 120 ns with power dissipation of just 275 mW. When the device
is deselected, the CMOS standby current is less than 10 mA.
The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without
the need for external components. The device contains a 128-byte page register to
allow writing of up to 128 bytes simultaneously. During a write cycle, the address and
1 to 128 bytes of data are internally latched, freeing the address and data bus for
other operations. Following the initiation of a write cycle, the device will automatically
write the latched data using an internal control timer. The end of a write cycle can be
detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected
a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality in manufacturing. The
device utilizes internal error correction for extended endurance and improved data
retention characteristics. An optional software data protection mechanism is available
to guard against inadvertent writes. The device also includes an extra 128 bytes of
EEPROM for device identification or tracking.
Rev. 4259E–AERO–02/11

                    
                    






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