MOSFET. PD1203BEA Datasheet

PD1203BEA MOSFET. Datasheet pdf. Equivalent

Part PD1203BEA
Description MOSFET
Feature PD1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download PD1203BEA Datasheet

PD1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD1203BEA Datasheet
Recommendation Recommendation Datasheet PD1203BEA Datasheet





PD1203BEA
PD1203BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID
11A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
11
9
44
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
28
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.3
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/6/24



PD1203BEA
PD1203BEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
55 °C / W
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air
environment with TA=25°CThe value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.5
3
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
44
0.03
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
13 17.5
9 12
30 S
DYNAMIC
Input Capacitance
Ciss
1040
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
145 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
104
1.6 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,VGS = 10V,
ID = 11A
VDS = 0.5V(BR)DSS,
ID @ 11A, VGS = 10V, RGEN = 6Ω
21
10
nC
3.5
5.2
10
4
nS
20
4
REV 1.0
2 2014/6/24





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