MOSFET. P2E03BK Datasheet

P2E03BK MOSFET. Datasheet pdf. Equivalent

Part P2E03BK
Description MOSFET
Feature P2E03BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.5mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2E03BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2E03BK Datasheet
Recommendation Recommendation Datasheet P2E03BK Datasheet





P2E03BK
P2E03BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.5mΩ @VGS = 10V
ID
106A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
Power Dissipation
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
ID
IDM
ID
IAS
EAS
PD
PD
TJ, TSTG
106
67
180
22
18
67
227
48
19
2.1
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
57
Junction-to-Case
Steady-State
RqJC
2.6
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA=25°C.The value in any given application depends on the user's specific board design
3Package limitation current is 78A
UNIT
S
°C / W
Ver 1.0
1 2012/5/16



P2E03BK
P2E03BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
30
1 1.6
3
V
±100 nA
1
mA
10
2.4 4
1.6 2.5
65 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss VGS = 0V, VDS = 15V, f = 1MHz
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
4610
850
634
1.1
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS=10V
VGS=4.5V
Qgs
VDS = 0.5V(BR)DSS , ID = 20A,
VGS = 10V
107
54
14
Gate-Drain Charge2
Qgd
26
Turn-On Delay Time2
td(on)
20.4
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
VGS = 10V, ID @ 1A, RGEN = 6Ω
8.1
113
Fall Time2
tf
15.7
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /μS
32
18
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 78A
106
1
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/5/16





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