MOSFET. PK510BA Datasheet

PK510BA MOSFET. Datasheet pdf. Equivalent

Part PK510BA
Description MOSFET
Feature PK510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.3mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PK510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK510BA Datasheet
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PK510BA
PK510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ @VGS = 10V
ID2
86A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
86
ID
54
IDM 150
Continuous Drain Current
TA = 25 °C
TA = 70 °C
21
ID 16
Avalanche Current
IAS 47
Avalanche Energy
L = 0.1mH
EAS 110
Power Dissipation
TC = 25 °C
TC = 100 °C
41
PD 16
Power Dissipation
TA = 25 °C
TA = 70 °C
2.5
PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
3
Junction-to-Ambient3
RqJA
50
1Pulse width limited by maximum junction temperature.
2Package limitation current is 50A
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA=25°C
UNITS
°C / W
Ver 1.0
1 2012/11/1



PK510BA
PK510BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.3 1.6 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
3.4 4
2.8 3.3
100
DYNAMIC
Input Capacitance
Ciss
2623
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
350
Reverse Transfer Capacitance
Crss
244
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 20A,
VGS = 10V
VDS = 15V,ID @ 20A, VGS=20V,
RGEN= 6Ω
66
34
9
16
25
12
56
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
86
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
28
15
2Independent of operating temperature.
3Package limitation current is 50A
UNIT
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/11/1





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