MOSFET. PA210HK Datasheet

PA210HK MOSFET. Datasheet pdf. Equivalent

Part PA210HK
Description MOSFET
Feature PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS.
Manufacture UNIKC
Datasheet
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PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PA210HK Datasheet
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PA210HK
PA210HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID
8.7A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
8.7
ID 5.5
IDM 25
Continuous Drain Current
TA = 25 °C
TA = 70 °C
2.8
ID 2.2
Avalanche Current
IAS 8.7
Avalanche Energy
L = 1mH
EAS 37.8
Power Dissipation
TC = 25 °C
TC = 100 °C
20
PD 8
Power Dissipation
TA = 25 °C
TA = 70 °C
2.1
PD 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
58
Junction-to-Case
RqJC
6.2
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2016/8/16



PA210HK
PA210HK
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1 2.1
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 70 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 2A
VGS = 10V, ID = 2A
VDS = 5V, ID = 2A
101 130
92 120
7S
DYNAMIC
Input Capacitance
Ciss
1474
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
80 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 50V,
VGS = 10V, ID = 2A
VDS = 50V,ID @ 2A,
VGS = 10V, RG = 6Ω
56
1.3 Ω
30
4.4 nC
8.7
30
44
nS
150
110
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 2A, VGS = 0V
8.7 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
41 nS
54 nC
2Independent of operating temperature.
REV 1.1
2 2016/8/16





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