MOSFET. PK512BA Datasheet

PK512BA MOSFET. Datasheet pdf. Equivalent

Part PK512BA
Description MOSFET
Feature PK512BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.8mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PK512BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK512BA Datasheet
Recommendation Recommendation Datasheet PK512BA Datasheet





PK512BA
PK512BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ @VGS = 10V
ID2
93A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
93
ID
59
IDM 150
Continuous Drain Current
TA = 25 °C
TA = 70 °C
22
ID 17
Avalanche Current
IAS 49
Avalanche Energy
L = 0.1mH
EAS 120
Power Dissipation
TC = 25 °C
TC = 100 °C
44
PD 17
Power Dissipation
TA = 25 °C
TA = 70 °C
2.5
PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
3
Junction-to-Ambient3
RqJA
50
1Pulse width limited by maximum junction temperature.
2Package limitation current is 52A
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA=25°C
UNITS
°C / W
Ver 1.0
1 2013-4-18



PK512BA
PK512BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
V
1.5 1.75 2.35
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
2.7 3.6
2.3 2.8
112 S
DYNAMIC
Input Capacitance
Ciss
3170
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
369 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
295
0.8 1.5
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 20A,VGS = 10V
VDS = 15V,ID @ 20A, VGS=20V,
RGEN= 6Ω
65
34
nC
9
13
29
13
nS
57
14
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
93 A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
28 nS
17 nC
2Independent of operating temperature.
3Package limitation current is 52A
Ver 1.0
2 2013-4-18





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