MOSFET. PK527BA Datasheet

PK527BA MOSFET. Datasheet pdf. Equivalent

Part PK527BA
Description MOSFET
Feature PK527BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14m.
Manufacture UNIKC
Datasheet
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PK527BA P-Channel Logic Level Enhancement Mode MOSFET PRODU PK527BA Datasheet
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PK527BA
PK527BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID
-31A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
TC = 25 °C
-31
Continuous Drain Current
TC = 100 °C
TA = 25 °C
ID
-20
-10
Pulsed Drain Current1
TA = 70 °C
IDM
-7.8
-90
Avalanche Current
IAS -30
Avalanche Energy
L =0.1mH
EAS
45
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
10
2.4
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
Junction-to-Case
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
REV 1.0
1 2015/8/18



PK527BA
PK527BA
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VGS = -4.5V, ID = -9A
VGS = -10V , ID = -10A
VDS = -5V, ID = -10A
-30
-1.1
-1.6 -2.1
±100
-1
-10
16 22
12.2 14
30
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1730
252
198
4.2
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS =-10V
VGS =-4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V,ID = -10A
VDS = -15V,
ID @ -1A, VGS = -10V, RGS = 6Ω
34
17.3
5
7.8
25
26
75
46
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
-20 A
Forward Voltage1
VSD IF = -10A, VGS = 0V
-1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -10A, dlF/dt = 100A / mS
16 nS
5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2015/8/18





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