MOSFET. PK537BA Datasheet

PK537BA MOSFET. Datasheet pdf. Equivalent

Part PK537BA
Description MOSFET
Feature PK537BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 8mΩ.
Manufacture UNIKC
Datasheet
Download PK537BA Datasheet

PK537BA P-Channel Logic Level Enhancement Mode MOSFET PRODU PK537BA Datasheet
Recommendation Recommendation Datasheet PK537BA Datasheet





PK537BA
PK537BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
8mΩ @VGS = -10V
ID
-38A
PDFN 5x6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-38
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-24
-12
-10
-100
-37
Avalanche Energy
L = 0.1mH
EAS
68.4
TC = 25 °C
20
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
8.3
2.3
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.2
1 2017/1/3



PK537BA
PK537BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
54
Junction-to-Case
RqJC
6
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
uA
-10
VGS = -10V, ID = -12A
VGS = -4.5V, ID = -12A
5.9 8
8.9 14
VDS = -5V, ID = -12A
40 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -12A
VDS = -15V,
ID @ -12A, VGS = -10V, RGS = 6Ω
2464
374
271
3.9
60
27.6
8
13.6
22
25
100
75
pF
Ω
nC
nS
REV1.2
2 2017/1/3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)