MOSFET. PK626HY Datasheet

PK626HY MOSFET. Datasheet pdf. Equivalent

Part PK626HY
Description MOSFET
Feature PK626HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.4mΩ @VGS = .
Manufacture UNIKC
Datasheet
Download PK626HY Datasheet

PK626HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PK626HY Datasheet
Recommendation Recommendation Datasheet PK626HY Datasheet





PK626HY
PK626HY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
2.4mΩ @VGS = 10V
30V 7mΩ @VGS = 10V
ID CH.
99A Q2
43A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2
VDS
Q1
30
30
Gate-Source Voltage
Q2
VGS
Q1
±20
±20
Continuous Drain Current3
TC = 25 °C
TC = 100 °C
Q2
Q1
ID
Q2
Q1
99
43
63
27
Pulsed Drain Current1
Q2
IDM Q1
120
55
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Q2
Q1
ID
Q2
Q1
25
11
20
9.5
Avalanche Current
Q2
IAS
Q1
48
23
Avalanche Energy
L = 0.1mH
Q2
EAS
Q1
115
26.4
Power Dissipation
TC = 25 °C
TC = 100 °C
Q2
Q1
PD Q2
Q1
43
24
17
9.6
REV 1.0
1
UNITS
V
A
mJ
W
2017/1/5



PK626HY
PK626HY
Dual N-Channel Enhancement Mode MOSFET
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
Q2 2.7
Q1 1.7
Q2 1.7
Q1 1.1
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient2
SYMBOL
RqJA
CH. TYPICA
Q2 L
Q1
MAXIMUM
46
70
Junction-to-Case
RqJC
Q2
Q1
2.9
5.2
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
3Package limitation current :Q1=29A,Q2=34A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH.
MIN TYP
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 1mA
VGS = 0V, ID = 250mA
Q2
Q1
30
30
Gate Threshold Voltage
VGS(th)
Q2 1.3 1.75
VDS = VGS, ID = 250mA Q1 1.3 1.75
Gate-Body Leakage
Q2
IGSS VDS = 0V, VGS = ±20V
Q1
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V,
VGS = 0V , TJ = 55 °C
Q2
Q1
Q2
Q1
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 15A
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 20A
VGS = 10V, ID = 11A
VDS = 5V, ID = 20A
VDS = 5V, ID = 11A
Q2
Q1
Q2
Q1
Q2
Q1
2.3
7.4
1.9
5.6
70
50
UNITS
MAX
2.3
2.3
±100
±100
0.5
1
5
10
3
9.5
2.4
7
V
nA
mA
mA
mA
mA
S
REV 1.0 2 2017/1/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)