P0320AL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
1. 1Ω @VGS = 10V
ID 1A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
1 0. 8 4
Avalanche Current
IAS 2
Avalanche Energy
L = 26. 6mH
EAS
53
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2. 5 1. 6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIM...