MOSFET. PKC50DY Datasheet

PKC50DY MOSFET. Datasheet pdf. Equivalent

Part PKC50DY
Description MOSFET
Feature PKC50DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 1.65mΩ @VGS =.
Manufacture UNIKC
Datasheet
Download PKC50DY Datasheet

PKC50DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PKC50DY Datasheet
Recommendation Recommendation Datasheet PKC50DY Datasheet





PKC50DY
PKC50DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
1.65mΩ @VGS = 10V
30V 9.5mΩ @VGS = 10V
ID CH.
120A Q2
37A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2
VDS
Q1
30
30
Gate-Source Voltage
Q2
VGS
Q1
±20
±20
Continuous Drain Current3
TC = 25 °C
TC = 100 °C
Q2
Q1
ID
Q2
Q1
120
37
76
23
Pulsed Drain Current1
Q2
IDM Q1
200
70
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Q2
Q1
ID
Q2
Q1
27
10
22
8.1
Avalanche Current
Q2
IAS
Q1
62
22
Avalanche Energy
L = 0.1mH
Q2
EAS
Q1
192
24
Power Dissipation
TC = 25 °C
TC = 100 °C
Q2
Q1
PD Q2
Q1
48
25
19
10
REV 1.0
1
UNITS
V
A
mJ
W
2017/1/3



PKC50DY
PKC50DY
Dual N-Channel Enhancement Mode MOSFET
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
Q2 2.5
Q1 1.8
Q2 1.6
Q1 1.2
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient2
SYMBOL
RqJA
CH. TYPICA
Q2 L
Q1
MAXIMUM
50
67
Junction-to-Case
RqJC
Q2
Q1
2.6
5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
3The maximum current rating is package limited.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH.
MIN TYP
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
Q2
Q1
30
30
Gate Threshold Voltage
VGS(th)
Q2 1.3 1.75
VDS = VGS, ID = 250mA Q1 1.3 1.75
Gate-Body Leakage
Q2
IGSS VDS = 0V, VGS = ±20V
Q1
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V,
VGS = 0V , TJ = 55 °C
Q2
Q1
Q2
Q1
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 16A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 20A
VGS = 10V, ID = 10A
VDS = 5V, ID = 20A
VDS = 5V, ID = 10A
Q2
Q1
Q2
Q1
Q2
Q1
1.5
11.3
1.1
6.9
66
37
UNITS
MAX
2.3
2.3
±100
±100
1
1
10
10
2.2
14
1.65
9.5
V
nA
mA
S
REV 1.0 2 2017/1/3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)