MOSFET. P7006BL Datasheet

P7006BL MOSFET. Datasheet pdf. Equivalent

Part P7006BL
Description MOSFET
Feature P7006BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 70mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P7006BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P7006BL Datasheet
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P7006BL
P7006BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 70mΩ @VGS = 10V
ID
3.8A
SOT-223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current12
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
3.8
3
25
16
Avalanche Energy3
EAS 12.8
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, Tstg
2
1.3
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3L = 0.1mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.
UNITS
°C / W
REV 1.0
1 2013-11-25



P7006BL
P7006BL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMIT
MSIN TYP
STATIC
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
60
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 3A
VGS = 10V , ID = 3.8A
VDS = 5V, ID = 3.8A
1 1.7
60
46
11
DYNAMIC
Input Capacitance
Ciss
603
Output Capacitance
Reverse Transfer
Capacitance
Gate Resistance
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
62
41
1.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 30V,
VGS = 10V, ID = 3.8A
13.2
2.1
4.1
Turn-On Delay Time2
td(on)
10.5
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V
ID @ 1A, VGS = 10V, RGS = 24Ω
17.4
28.8
Fall Time2
tf
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 3.8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3.5A, dlF/dt = 100A / μS
23
19
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
UNITS
MAX
2.5
±100
1
10
90
70
V
nA
mA
S
pF
Ω
nC
nS
2A
1V
nS
nC
REV 1.0
2 2013-11-25





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