Synchronous DRAM. EM484M1644VTD Datasheet

EM484M1644VTD DRAM. Datasheet pdf. Equivalent

Part EM484M1644VTD
Description 64Mb Synchronous DRAM
Feature eorex EM484M1644VTD 64Mb (1M4Bank16) Synchronous DRAM Features • Fully Synchronous to Positive .
Manufacture Eorex
Datasheet
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eorex EM484M1644VTD 64Mb (1M4Bank16) Synchronous DRAM F EM484M1644VTD Datasheet
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EM484M1644VTD
eorex
EM484M1644VTD
64Mb (1M4Bank16) Synchronous DRAM
Features
Fully Synchronous to Positive Clock Edge
Single 3.3V 0.3V Power Supply
LVTTL Compatible with Multiplexed Address
Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
Programmable CAS Latency (C/L) - 2 or 3
Data Mask (DQM) for Read / Write Masking
Programmable Wrap Sequence
Sequential (B/L = 1/2/4/8/full Page)
Interleave (B/L = 1/2/4/8)
Burst Read with Single-bit Write Operation
All Inputs are Sampled at the Rising Edge of
the System Clock
Auto Refresh and Self Refresh
4,096 Refresh Cycles / 64ms (15.625us)
Description
The EM484M1644VTD is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
1Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 64Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages:TSOPII 54P 400mil.
Ordering Information
Part No
EM484M1644VTD-7F
EM484M1644VTD-6F
EM484M1644VTD-7FE
EM484M1644VTD-6FE
Organization
4M X 16
4M X 16
4M X 16
4M X 16
Max. Freq
143MHz @CL3
166MHz @CL3
143MHz @CL3
166MHz @CL3
Package
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
Grade
Commercial
Commercial
Extended
Extended
Pb
Free
Free
Free
Free
Apr. 2014
www.eorex.com
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EM484M1644VTD
eorex
Pin Assignment
EM484M1644VTD
54pin TSOP-II / (400mil 875mil) / (0.8mm Pin pitch)
Apr. 2014
www.eorex.com
2/18





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