Flash Plus. SST39VF6401B Datasheet

SST39VF6401B Plus. Datasheet pdf. Equivalent

Part SST39VF6401B
Description 64 Mbit (x16) Multi-Purpose Flash Plus
Feature Not recommended for new designs. Please use SST38VF6401B/6402B/6403B/64040B 64 Mbit (x16) Multi-Purp.
Manufacture Microchip
Datasheet
Download SST39VF6401B Datasheet

www.DataSheet4U.com 64 Mbit (x16) Multi-Purpose Flash Plus SST39VF6401B Datasheet
Not recommended for new designs. Please use SST38VF6401B/640 SST39VF6401B Datasheet
Recommendation Recommendation Datasheet SST39VF6401B Datasheet





SST39VF6401B
Not recommended for new designs.
Please use SST38VF6401B/6402B/6403B/64040B
64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF6401B / SST39VF6402B
Not Recommended for New Designs
The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared with alternate
approaches. The SST39VF6401B / SST39VF6402B write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts
for x16 memories and are command set compatible with other Flash devices,
enabling customers to save time and resources in implementation.
Features
• Organized as 4M x16
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF6402B
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF6401B
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– Microchip: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pin Assignments
– Software command sequence compatibility
- Address format is 11 bits, A10-A0
- Block-Erase 6th Bus Write Cycle is 30H
- Sector-Erase 6th Bus Write Cycle is 50H
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
• All devices are RoHS compliant
© 2015
www.microchip.com
DS20005008B
08/15



SST39VF6401B
64 Mbit Multi-Purpose Flash Plus
SST39VF6401B / SST39VF6402B
Product Description
Not Recommended for New Designs
The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with
proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and manufacturability compared with alternate
approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Pro-
gram time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Pro-
gram operation. To protect against inadvertent write, they have on-chip hardware and Software Data
Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39VF640xB devices are suited for applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all system applications, they significantly improve
performance and reliability, while lowering power consumption. They inherently use less energy during
Erase and Program than alternative flash technologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than alternative flash technologies. These devices also
improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead
TSOP and 48-ball TFBGA packages. See Figures and 2 for pin assignments.
© 2015
DS20005008B
08/15
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)