Mobile RAM. EDD10321BBH-TS Datasheet

EDD10321BBH-TS RAM. Datasheet pdf. Equivalent

Part EDD10321BBH-TS
Description 1G bits DDR Mobile RAM
Feature PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR (Wide Temperature Range) EDD10321BBH-TS (32M wo.
Manufacture Elpida Memory
Datasheet
Download EDD10321BBH-TS Datasheet

PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR (Wide T EDD10321BBH-TS Datasheet
Recommendation Recommendation Datasheet EDD10321BBH-TS Datasheet





EDD10321BBH-TS
PRELIMINARY DATA SHEET
1G bits DDR Mobile RAM
WTR (Wide Temperature Range)
EDD10321BBH-TS (32M words × 32 bits)
Specifications
Density: 1G bits
Organization: 8M words × 32 bits × 4 banks
Package: 90-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
Power supply: VDD, VDDQ = 1.7V to 1.95V
Data rate: 400Mbps/333Mbps (max.)
4KB page size
Row address: A0 to A12
Column address: A0 to A9
Four internal banks for concurrent operation
Interface: LVCMOS
Burst lengths (BL): 2, 4, 8
Burst type (BT):
Sequential (2, 4, 8)
Interleave (2, 4, 8)
/CAS Latency (CL): 3
Precharge: auto precharge option for each burst
access
Driver strength: normal, 1/2, 1/4
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period: 7.8µs
Operating ambient temperature range
TA = 25°C to +85°C
Features
DLL is not implemented
Low power consumption
Double-data-rate architecture; two data transfers per
one clock cycle
The high-speed data transfer is realized by the 2 bits
prefetch pipelined architecture
Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver.
Data inputs, outputs, and DM are synchronized with
DQS
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Burst termination by burst stop command and
Precharge command
Wide temperature range
TA = 25°C to +85°C
Low Power Function below is not supported
Partal Array Self-Refresh (PASR)
Auto Temperature Compensated Self-Refresh
Deep power-down mode
Document No. E1403E30 (Ver. 3.0)
Date Published October 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2008-2009



EDD10321BBH-TS
EDD10321BBH-TS
Ordering Information
Part number
EDD10321BBH-5BTS-F
Die
revision
B
EDD10321BBH-6ETS-F
Organization
(words × bits)
32M × 32
Internal
banks
4
Data rate
Mbps (max.)
400
333
/CAS latency
3
3
Package
90-ball FBGA
Part Number
E D D 10 32 1 B BH - 5B TS - F
Elpida Memory
Type
D: Monolithic Device
Product Family
D: DDR Mobile RAM
Density / Bank
10: 1Gb / 4-bank
Organization
32: x32
Power Supply, Interface
1: 1.8V, LVCMOS, w/o Low Power Function
Environment Code
F: Lead Free (RoHS Compliant)
and Halogen Free
Spec Detail
TS: WTR (-25°C to +85°C)
Speed
5B: DDR400 (3-3-3)
6E: DDR333 (3-3-3)
Package
BH: FBGA
Die Rev.
Preliminary Data Sheet E1403E30 (Ver. 3.0)
2





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