N-Channel MOSFET. P092ABD Datasheet

P092ABD MOSFET. Datasheet pdf. Equivalent

Part P092ABD
Description N-Channel MOSFET
Feature P092ABD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P092ABD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P092ABD Datasheet
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P092ABD
P092ABD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID
63A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
63
40
180
Avalanche Current
IAS 29
Avalanche Energy
L=0.1mH
EAS
42
Power Dissipation
TC= 25 °C
TC= 100°C
PD
65
26
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
1.9 °C / W
REV 1.0
1 2014/4/29



P092ABD
P092ABD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
25
1
1.5 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =25A
10.5 15
6 9.5
Forward Transconductance1
gfs
VDS =5V, ID =25A
35 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss 635 794 953
Coss VGS = 0V, VDS = 15V, f = 1MHz 222 277 332 pF
Crss 100 167 234
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz 0.9 1.8 2.7
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS = 10V
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = 25A
VDS = 15V ,
ID25A, VGS = 10V, RGEN =6Ω
14.8
8.6
2.2
3.7
18.5
10.8
2.8
6.1
18
11
37
12
22.2
12.9
3.4
8.5
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 25A, dlF/dt = 100A / ms
12.7
3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Limited by package.
63
1.3
A
V
nS
nC
REV 1.0
2 2014/4/29





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