P-Channel MOSFET. P1504EDG Datasheet

P1504EDG MOSFET. Datasheet pdf. Equivalent

Part P1504EDG
Description P-Channel MOSFET
Feature P1504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P1504EDG Datasheet

NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P1504EDG Datasheet
P1504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1504EDG Datasheet
Recommendation Recommendation Datasheet P1504EDG Datasheet





P1504EDG
P1504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID
-45A
TO-252
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
-45
-36
-150
Avalanche Current
IAS -45
Avalanche Energy2
L=0.1mH
EAS
102
Power Dissipation
TC= 25 °C
TC= 70°C
PD
50
32
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2VDD = -20V . Starting TJ = 25°C.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
75
2.5
UNITS
°C / W
REV 1.0
1 2014/5/12



P1504EDG
P1504EDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS =-32V, VGS = 0V
VDS =-30V, VGS = 0V, TJ = 55°C
-40
-1.7 -2.2
-3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-4.5V, ID =-15A
VGS =-10V, ID =-25A
19 29
13 15
Forward Transconductance1
On-State Drain Current1
gfs
ID(ON)
VDS =-5V, ID =-25A
VDS = -5V, VGS = -10V
-150
24
S
A
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
2700 2950
400 430
pF
Reverse Transfer Capacitance
Crss
230 250
Gate Resistance
Rg VGS = -15mV, VDS = 0V, f = 1MHz
3.5 4.5
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =0.5V(BR)DSS, VGS= -10V,ID = -25A
@VDS =-20V , RL = 0.75Ω ,ID 1A,
VGS=-10V,RGEN=6Ω
40 45
10 13 nC
58
11
75
nS
89
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
-0.7
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -25A, dlF/dt = 100A / μS
28
26
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-25
-1.3
A
V
nS
nC
REV 1.0
2 2014/5/12





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