N-Channel MOSFET. P1820HDB Datasheet

P1820HDB MOSFET. Datasheet pdf. Equivalent

Part P1820HDB
Description N-Channel MOSFET
Feature P1820HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 157mΩ @VGS = 1.
Manufacture UNIKC
Datasheet
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P1820HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1820HDB Datasheet
Recommendation Recommendation Datasheet P1820HDB Datasheet





P1820HDB
P1820HDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
157mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
9
30
Avalanche Current
IAS 12
Avalanche Energy
L = 1mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.5
°C / W
62.5
REV 1.0
1 2016/2/29



P1820HDB
P1820HDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
200
V
123
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 9A
VGS = 10V, ID = 9A
VDS = 10V, ID = 9A
148 188
131 157
21 S
DYNAMIC
Input Capacitance
Ciss
780
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz 132 pF
Reverse Transfer Capacitance
Crss
16
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V, ID = 18A
VDS = 100V,ID @ 18A,
VGS = 10V, RGEN = 25Ω
24
12
nC
3
8
20
135
nS
176
128
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 18A, VGS = 0V
18 A
1V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 18A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
122 nS
0.67 uC
2Independent of operating temperature.
REV 1.0
2 2016/2/29





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