P-Channel MOSFET. PC561BA Datasheet

PC561BA MOSFET. Datasheet pdf. Equivalent

Part PC561BA
Description P-Channel MOSFET
Feature PC561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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PC561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PC561BA Datasheet
Recommendation Recommendation Datasheet PC561BA Datasheet





PC561BA
PC561BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID
-5.7A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-5.7
-4.5
-20
Avalanche Current
IAS -12
Avalanche Energy
L = 0.1mH
EAS
7
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
Junction-to-Case
Steady-State
RqJC
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
3The Power dissipation is based on RqJA t 10s value.
MAXIMUM UNITS
50
73 °C / W
18
REV 1.0
1 2016/5/31



PC561BA
PC561BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-1.3 -1.6 -2.3
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
-1
mA
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -4A
VGS = -10V, ID = -4A
VDS = -5V, ID = -4A
46 85
32 45
10 S
DYNAMIC
Input Capacitance
Ciss
585
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
90 pF
Reverse Transfer Capacitance
Crss
67
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS= -10V)
Qg(VGS= -4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V , VGS =-10V,
ID = -4A
VDD = -15V, VGS = -10V
ID @ -4A, RGS = 6Ω
12
6
nC
1.5
3.3
17
24
nS
18
39
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -4A, VGS = 0V
-2 A
-1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -4A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
10 nS
2 nC
2Independent of operating temperature.
REV 1.0
2 2016/5/31





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