N-Channel MOSFET. PD510BA Datasheet

PD510BA MOSFET. Datasheet pdf. Equivalent

Part PD510BA
Description N-Channel MOSFET
Feature PD510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.3mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PD510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD510BA Datasheet
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PD510BA
PD510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.3mΩ @VGS = 10V
ID
92A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
92
58
180
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
74.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 40A.
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.0
1 2013-12-24



PD510BA
PD510BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
30
1 1.6
3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
4.3 7
3.6 4.3
Forward Transconductance1
gfs
VDS = 5V, ID = 20A
82 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
2630
354
242
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.2 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 10 V,
VDS = 15V, ID = 20A
51
7.2 nC
12
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
22
nS
78
Fall Time2
tf
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
91 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
19 nS
6 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 40A.
REV 1.0
2 2013-12-24





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