P-Channel MOSFET. PD537BA Datasheet

PD537BA MOSFET. Datasheet pdf. Equivalent

Part PD537BA
Description P-Channel MOSFET
Feature PD537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 8mΩ @VGS = -10V.
Manufacture UNIKC
Datasheet
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PD537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD537BA Datasheet
Recommendation Recommendation Datasheet PD537BA Datasheet





PD537BA
PD537BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
8mΩ @VGS = -10V
ID
71A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
71
45
160
Avalanche Current
IAS 36
Avalanche Energy
L = 0.1mH
EAS
64.8
Power Dissipation
TC= 25 °C
TC= 100°C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is -55A.
SYMBOL
RqJC
RqJA
TYPICA
L
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.1
1 2015/7/22



PD537BA
PD537BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS =-24V, VGS = 0V
VDS =-20V, VGS = 0V, TJ = 125°C
-30
-1
-1.6 -3
±100
-1
-10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-4.5V, ID =-20A
VGS =-10V, ID =-20A
9.6 14
6.5 8
Forward Transconductance1
gfs VDS = -5V, ID = -20A
49 S
DYNAMIC
Input Capacitance
Ciss
2464
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
374
Reverse Transfer Capacitance
Crss
271
Gate Resistance
Rg VGS =0V, VDS = 0V, f = 1MHz
3.8
Total Gate Charge2
Gate-Source Charge2
Qg(VGS = -10V)
Qg(VGS = -4.5V)
Qgs
VDS =-15V,
ID = -20A
55
27
8.3
Gate-Drain Charge2
Qgd
11
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS =-15V ,ID @ -20A,
VGS=-10V,RGEN=6Ω
15
20
41
Fall Time2
tf
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = -20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A /mS
26
13
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is -55A.
-56
-1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2015/7/22





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