PLANAR TRANSISTOR. UTC2SC1384 Datasheet

UTC2SC1384 TRANSISTOR. Datasheet pdf. Equivalent

Part UTC2SC1384
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SC1.
Manufacture Unisonic Technologies
Datasheet
Download UTC2SC1384 Datasheet

UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PL UTC2SC1384 Datasheet
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UTC2SC1384
UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
*Low collector to emitter saturation voltage VCE(sat)
*Complementary pair with 2SA684
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Peak Collector Current
Icp 1.5
Collector Current (DC)
Ic 1
Collector Dissipation (Ta=25°C)
Pc
1
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
Collector-Base Voltage
VCBO
Ic=10µA,IE=0
60
Collector-Emitter Voltage
VCEO
Ic=2mA,IB=0
50
Emitter-Base Voltage
VEBO
IE=10µA,Ic=0
5
DC Current Gain
hFE1
VCE=10V, Ic=500mA (note) 85
hFE2
VCE=5V, IB=1A (note)
50
Collector-Emitter Saturation Voltage VCE(sat)
Ic=0.5A, IB=50mA (note)
Base-Emitter Saturation Voltage
VBE(sat)
Ic=0.5A, IB=50mA (note)
Current Gain Bandwidth Product
fT VCE=10V, IB=-50mA, f=200MHz
Output Capacitance
Cob VCB=10V,IE=0,f=1MHz
Note: Pulse measurement
TYP
160
100
0.2
0.85
200
11
MAX
0.1
340
UNIT
µA
V
V
V
0.4 V
1.2 V
MHz
20 pF
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R211-005,A



UTC2SC1384
UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Q
RANGE
85-170
R
120-240
S
170-340
TYPICAL PERFORMANCE CHARACTERISTICS
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R211-005,A





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