Quadrants Triacs. ADT8C80 Datasheet

ADT8C80 Triacs. Datasheet pdf. Equivalent

Part ADT8C80
Description 3 Quadrants Triacs
Feature   ADV                                                                                      ADT8C60/8.
Manufacture ADV
Datasheet
Download ADT8C80 Datasheet

  ADV                                                        ADT8C80 Datasheet
  ADV                                                        ADT8C80F Datasheet
  ADV                                                        ADT8C80G Datasheet
Recommendation Recommendation Datasheet ADT8C80 Datasheet





ADT8C80
 
ADV 
                                                                                    ADT8C60/80
3 Quadrants Triacs
General Description
High current density due to mesa technology . the ADT8C triac
series is suitable for general purpose AC switching. They can be
used as an ON/OFF function in applications such as static relays,
heating regulation, High power motor controls e.g. washing
machines and vacuum cleaners,Rectifier-fed DC inductive loads
e.g.DC motors and solenoids , motor speed controllers.
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
These Devices are Pb-Free and are RoHS Compliant
2.T2
3.Gate
1.T1
2
1 23
TO-220
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC =110°C
Conditions
ADT8C60
ADT8C80
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
8
100/106
38
50
4
1
10
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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ADV
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Feb,2013 -Rev.3.02



ADT8C80
 
ADV 
                                                                                    ADT8C60/80
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Rate of Change of Commutating
Current,
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 11A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 125°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 125°C
(dI/dt)c=-3.5A/ms
Tj = 125°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADT8C60/80
T S Blank B
5
1
1.55
Unit
uA
mA
V
0.2 V
1.3 V
5 10 35 50 mA
10 15 40 60 mA
10 25 50 70
mA
15 30 70 80
20 40 400 1000 V/μs
0.5 1 10 25 V/μs
1.6 °C/W
60 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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Feb,2013 -Rev.3.02





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