DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS 30V
RDS(on)
15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V
ID max
TA = +25°C 10.7A
9.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency po...
