MOSFET. RSD131P10 Datasheet

RSD131P10 MOSFET. Datasheet pdf. Equivalent

Part RSD131P10
Description MOSFET
Feature RSD131P10 Pch 100V 13A Power MOSFET RSD131P10 Datasheet VDSS RDS(on) (Max.) ID PD -100V 200mW -13.
Manufacture ROHM
Datasheet
Download RSD131P10 Datasheet

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RSD131P10
RSD131P10
Pch 100V 13A Power MOSFET
RSD131P10
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-100V
200mW
-13A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
lInner circuit
(3)
(1) Gate
(2) Drain
(3) Source
*1
(1) *2
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(2)
Taping
330
16
2,500
TL
131P10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
-100
13
7.0
52
20
11.9
-13
20
0.85
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A



RSD131P10
RSD131P10
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 6.25 °C/W
- - 147 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA
-100
-
-
Zero gate voltage drain current
VDS = -100V, VGS = 0V
Tj = 25°C
IDSS
VDS = -100V, VGS = 0V
Tj = 125°C
-
-
- -1
- -100
Gate - Source leakage current
Gate threshold voltage
IGSS
VGS (th)
VGS = 20V, VDS = 0V
VDS = -10V, ID = -1mA
VGS = -10V, ID = -6.5A
-
-1
-
- 10
- -2.5
135 200
Static drain - source
on - state resistance
VGS = -4.5V, ID = -6.5A
RDS(on) *5 VGS = -4.0V, ID = -6.5A
VGS = -10V, ID = -13A
Tj = 125°C
-
-
-
150 220
155 230
250 350
Forward transfer admittance
gfs VDS = -10V, ID = -13A 10
20
-
Unit
V
mA
mA
V
mW
S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/12
2012.08 - Rev.A





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