MOSFET. RSD160P05 Datasheet

RSD160P05 MOSFET. Datasheet pdf. Equivalent

Part RSD160P05
Description MOSFET
Feature Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Silicon P-channel MOSFET Features 1) Low on-re.
Manufacture ROHM
Datasheet
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RSD160P05
Data Sheet
4V Drive Pch MOSFET
RSD160P05
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD160P05
Taping
TL
2500
Inner circuit
1
2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 Tc=25C
Limits
45
20
16
32
16
32
20
150
55 to 150
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
6.25
Unit
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A



RSD160P05
RSD160P05
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
45
-
1.0
-
-
-
8.0
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
35
45
50
-
2000
250
140
13
22
90
50
16.0
5.2
5.0
Max.
10
-
1
3.0
50
63
70
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=45V, VGS=0V
V VDS=10V, ID=1mA
ID=16A, VGS=10V
mID=8A, VGS=4.5V
ID=8A, VGS=4.0V
S ID=8A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=8.0A, VDD 25V
ns VGS=10V
ns RL=3.1
ns RG=10
nC VDD 25V
nC ID=16A,
nC VGS=5V
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
1.2
Unit Conditions
V Is=16A, VGS=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A





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