MOSFET. RSJ400N06 Datasheet

RSJ400N06 MOSFET. Datasheet pdf. Equivalent

Part RSJ400N06
Description MOSFET
Feature 10V Drive Nch MOSFET RSJ400N06  Structure Silicon N-channel MOSFET Features 1) Low on-resistance..
Manufacture ROHM
Datasheet
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RSJ400N06
10V Drive Nch MOSFET
RSJ400N06
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High current
3) High power Package
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ400N06
Taping
TL
1000
Data Sheet
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Inner circuit
1
2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
60
20
40
80
40
80
50
150
Range of storage temperature
Tstg 55to150
*1 Pw10s, Duty cycle1%
*2 Tc=25C
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
2.5
Unit
C / W
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.09 - Rev.A



RSJ400N06
RSJ400N06
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS (on*)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
60
-
1.0
-
14
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
11
-
2400
490
250
20
60
90
140
52
8
15
Max.
10
-
1
3.0
16
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=60V, VGS=0V
V VDS=10V, ID=1mA
mID=40A, VGS=10V
S ID=20A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=20A, VDD 30V
ns VGS=10V
ns RL=1.5
ns RG=10
nC VDD 30V
nC ID=40A,
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
1.2
Unit Conditions
V Is=40A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.09 - Rev.A





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