MOSFET. RSJ400N10FRA Datasheet

RSJ400N10FRA MOSFET. Datasheet pdf. Equivalent

Part RSJ400N10FRA
Description MOSFET
Feature RSJ400N10FRA Nch 100V 40A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 100V 27m 40A 50W Ou.
Manufacture ROHM
Datasheet
Download RSJ400N10FRA Datasheet

RSJ400N10FRA Nch 100V 40A Power MOSFET Datasheet VDSS RDS( RSJ400N10FRA Datasheet
Recommendation Recommendation Datasheet RSJ400N10FRA Datasheet




RSJ400N10FRA
RSJ400N10FRA
Nch 100V 40A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
27m
40A
50W
Outline
LPTS
(SC-83)
AEC-Q102 Qualified
(2)
(1)
(3)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Inner circuit
(1) Gate
(2) Drain
(3) Source
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
Packaging specifications
Packaging
(3)
1
2
(2)
Taping
Application
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
330
16
2,500
TL
RSJ400N10
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
Tc = 25°C
Tc = 100°C
Tc = 25°C
Ta = 25°C *4
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
100
40
22
80
20
14.6
10
50
1.35
150
55 to 150
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
2016.04 - Rev.A



RSJ400N10FRA
RSJ400N10FRA
Thermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 2.5 °C/W
- - 92.6 °C/W
- - 265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
VDS = 100V, VGS = 0V
Zero gate voltage drain current
Tj = 25°C
IDSS
VDS = 100V, VGS = 0V
Tj = 125°C
Gate - Source leakage current
IGSS VGS = 20V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 40A
Static drain - source
on - state resistance
RDS(on) *5 VGS = 4.0V, ID = 40A
VGS = 10V, ID = 40A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 40A
Values
Min. Typ. Max.
100 -
-
- -1
- - 100
- - 10
1.0 - 2.5
- 19 27
- 21 30
- 42 60
23 56
-
Unit
V
A
A
V
m
S
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/12
2016.04 - Rev.A





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