Power MOSFET. RSD150N06FRA Datasheet

RSD150N06FRA MOSFET. Datasheet pdf. Equivalent

Part RSD150N06FRA
Description Nch 60V 15A Power MOSFET
Feature RSD150N06FRA    Nch 60V 15A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W .
Manufacture ROHM
Datasheet
Download RSD150N06FRA Datasheet

RSD150N06FRA    Nch 60V 15A Power MOSFET    Datasheet VDSS RSD150N06FRA Datasheet
Recommendation Recommendation Datasheet RSD150N06FRA Datasheet




RSD150N06FRA
RSD150N06FRA
   Nch 60V 15A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
60V
40mΩ
±15A
20W
lFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
6) AEC-Q101 Qualified
lOutline
TO-252
SC-63
CPT3
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
150N06
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60 V
Continuous drain current
ID*1 ±15 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 20 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170711 - Rev.001    



RSD150N06FRA
RSD150N06FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*3
Values
Min. Typ. Max.
- - 6.25
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 15A
RDS(on)*4 VGS = 4.5V, ID = 15A
VGS = 4.0V, ID = 15A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 15A
Values
Unit
Min. Typ. Max.
60 - - V
- 63.7 - mV/
- - 1 μA
- - ±10 μA
1.0 - 3.0 V
- -2.8 - mV/
- 28 40
- 33 47 mΩ
- 36 51
- 4.2 -
Ω
7 - -S
*1 Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 TC=25
*4 Pulsed
                                             
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20170711 - Rev.001





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)