IGBT. IXXH150N60C3 Datasheet

IXXH150N60C3 IGBT. Datasheet pdf. Equivalent

Part IXXH150N60C3
Description IGBT
Feature Advance Technical Information 600V XPTTM IGBT GenX3TM Extreme Light Punch through IGBT for 20-60kHz.
Manufacture IXYS
Datasheet
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IXXH150N60C3
Advance Technical Information
600V XPTTM IGBT
GenX3TM
Extreme Light Punch through
IGBT for 20-60kHz Switching
IXXH150N60C3
VCES = 600V
IC110 = 150A
VCE(sat)  2.5V
tfi(typ) = 75ns
Symbol
VCES
VCGR
VGES
VGEM
IICLR25MS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTeC rm=in2a5l°CCu(rCrehnipt
Capability)
Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
300 A
160 A
150 A
700 A
75 A
750 mJ
ICM = 300
VCE VCES
10
A
μs
1360
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 150A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
25 A
1 mA
200 nA
2.1 2.5 V
2.6 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
International Standard Package
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100558(8/13)



IXXH150N60C3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 150A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 75A, VGE = 15V
VCE = 400V, RG = 2
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 75A, VGE = 15V
VCE = 400V, RG = 2
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
27 45
S
6460
403
138
pF
pF
pF
200 nC
52 nC
80 nC
34 ns
70 ns
3.4 mJ
120 ns
75 ns
1.8 mJ
32 ns
68 ns
3.9 mJ
150 ns
80 ns
2.2 mJ
0.11 °C/W
0.21 °C/W
IXXH150N60C3
TO-247 (IXXH) Outline
1 - Gate
2,4 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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