Effect Transistor. PA520BA Datasheet

PA520BA Transistor. Datasheet pdf. Equivalent


Part PA520BA
Description N-Channel Field Effect Transistor
Feature NIKO-SEM N-Channel Enhancement Mode PA520BA Field Effect Transistor SOT-23-6 Halogen-Free & Lea.
Manufacture NIKO-SEM
Datasheet
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NIKO-SEM N-Channel Enhancement Mode PA520BA Field Effect PA520BA Datasheet
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PA520BA
NIKO-SEM
N-Channel Enhancement Mode
PA520BA
Field Effect Transistor
SOT-23-6
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ
ID
6A
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Curren
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
G: GATE
D: DRAIN
S: SOURCE
LIMITS
±20
6
4.7
30
17
15
1.1
0.7
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
Junction-to-Ambient2
RθJC
RθJA
40
°C / W
110
1Pulse width limited by maximum junction temperature.
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 6A
30
1 1.4 2.5
V
±100 nA
1
µA
10
15.3 20
18.2 25
mΩ
41 S
REV 0.9
Feb-22-2012
1



PA520BA
NIKO-SEM
N-Channel Enhancement Mode
PA520BA
Field Effect Transistor
SOT-23-6
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
496
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
81
Reverse Transfer Capacitance
Total Gate Charge2
Crss
Qg(VGS=10V)
73
14.4
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =15V, ID = 6A
VDD = 15V,
ID 6A, VGS = 10V, RGEN = 6Ω
8
1.6
3.9
12
10
27
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
trr IF = 6A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
VGS = 0V
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
10.7
2.6
6
1
pF
nC
nS
A
V
nS
nC
REV 0.9
Feb-22-2012
2





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