POWER MOSFET. 4NM65-U2 Datasheet

4NM65-U2 MOSFET. Datasheet pdf. Equivalent


Part 4NM65-U2
Description N-CHANNEL POWER MOSFET
Feature UNISONIC TECHNOLOGIES CO., LTD 4NM65-U2 4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The U.
Manufacture Unisonic Technologies
Datasheet
Download 4NM65-U2 Datasheet


UNISONIC TECHNOLOGIES CO., LTD 4NM65-U2 4A, 650V N-CHANNEL S 4NM65-U2 Datasheet
Recommendation Recommendation Datasheet 4NM65-U2 Datasheet




4NM65-U2
UNISONIC TECHNOLOGIES CO., LTD
4NM65-U2
4A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65-U2 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) < 2.1@ VGS =10V, ID = 2.0 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM65L-TF1-T
4NM65G-TF1-T
4NM65L-TM3-T
4NM65G-TM3-T
4NM65L-TN3-R
4NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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QW-R205-334.B



4NM65-U2
4NM65-U2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
4A
Pulsed (Note 2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
116 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4 V/ns
Power Dissipation
TO-220F1
TO-251/TO-252
PD
36 W
50 W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=144mH, IAS=1.27A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD4.0A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220F1
TO-251/TO-252
TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
3.67
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-334.B







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