Flash Memory. AM29F010A Datasheet

AM29F010A Memory. Datasheet pdf. Equivalent

Part AM29F010A
Description Uniform Sector Flash Memory
Feature Am29F010A 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHA.
Manufacture Advanced Micro Devices
Download AM29F010A Datasheet

Am29F010A 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Unif AM29F010A Datasheet
Recommendation Recommendation Datasheet AM29F010A Datasheet

1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
s Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
s Manufactured on 0.55 µm process technology
— Compatible with 0.85 µm Am29F010 device
s High performance
— 45 ns maximum access time
s Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
s Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
s Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
s Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
s Erase Suspend/Resume
— Supports reading data from a sector not
being erased
s Minimum 100,000 program/erase cycles
s 20-year data retention at 125°C
— Reliable operation for the life of the system
s Package options
— 32-pin PLCC
— 32-pin TSOP
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 22181 Rev: B Amendment/0
Issue Date: January 1999

The Am29F010A is a 1 Mbit, 5.0 Volt-only Flash
memory organized as 131,072 bytes. The Am29F010A
is offered in 32-pin PLCC and TSOP packages. The
byte-wide data appears on DQ0-DQ7. The device is
designed to be programmed in-system with the standard
system 5.0 Volt VCC supply. A 12.0 volt VPP is not required
for program or erase operations. The device can also be
programmed or erased in standard EPROM programmers.
This device is manufactured using AMD’s 0.55 µm pro-
cess technology, and offers all the features and benefits
of the Am29F010, which was manufactured using 0.85
µm process technology. In addition, the Am29F010A
offers the erase suspend/erase resume feature.
The standard device offers access times of 45, 55, 70,
90, and 120 ns, allowing high-speed microprocessors
to operate without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This invokes the Embedded Pro-
gram algorithm—an internal algorithm that
automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The hardware data protection measures include a
low VCC detector automatically inhibits write operations
during power transitions. The hardware sector protec-
tion feature disables both program and erase operations
in any combination of the sectors of memory, and is im-
plemented using standard EPROM programmers.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y, a n d c o s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
2 Am29F010A

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